IEC 62830-5-2021 pdf free download – Semiconductor devices – Semiconductor devices for energy harvesting and generation – Part 5: Test method for measuring generated power from flexible thermoelectric devices.
This part of IEC 62830 specifies the test method for measuring generated electric power from flexible thermoelectric devices under bending conditions. This document provides terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance of flexible thermoelectric devices. This document also describes the test conditions such as temperature, temperature difference, contact conditions, insulation and bending radius of flexible thermoelectric devices. This document is applicable to flexible energy harvesting devices for flexible semiconductor devices.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following addresses:
IEC Electropedia: available at http://www.electropedia.org/
ISO Online browsing platform: available at http://www.iso.org/obp
3.1
thermoelectric generator
device that converts heat (temperature difference) directly into electrical energy, using a phenomenon called the Seebeck effect
3.2
bending radius
minimum radius, measured to the inside curvature, of a pipe, tube, sheet, cable or hose that can be bent without kinking damaging it or shortening its life
3.3
Seebeck coefficient
S magnitude of an induced thermoelectric voltage in response to a temperature difference across a material, and the entropy per charge carrier in the material
[SOURCE: IEC 62830-2:2017, 3.1]
3.4
thermal conductivity
k c at a point fixed in a medium with a temperature field, scalar quantity k characterizing the c ability of the medium to transmit heat through a surface element containing that point: φ = −k c grad T, where φ is the density of heat flow rate and T is thermodynamic temperature Note 1 to entry: It appears primarily in Fourier’s Law for heat conduction. This value is dependent on temperature.
Thermal resistivity is given by the reciprocal of thermal conductivity.
[SOURCE: IEC 60050-113:2011, 113-04-38, modified – the scalar quantity has been changed to k c and the notes have been replaced by Note 1.]
3.5
temperature difference
T h-c difference between the cooling and heating sides
3.6
heat input
Q hot measured (or calculated) input thermal energy to the thermoelectric device
3.7
dissipated heat
Q cold measured (or calculated) dissipated thermal energy from the thermoelectric device
4 Testing method
4.1 General experimental apparatus
The general principle for the test set-up to measure the amount of power generation from thermoelectric devices, especially focusing on flexible thermoelectric devices, is described. In general, the thermoelectric device generates electric energy due to the temperature difference between one surface of the device and the other surface. Hence, in order to characterize the performance of the device, the temperature of both the cooling and heating sides in an experimental set-up should be maintained consistently. The general schematic diagram of the thermoelectric device, including the experimental set-up to measure the generated power, is illustrated in Figure 1. An explanation about the commonly used formulas related to the thermoelectric device and the experimental set-up is also included. The basic principle of the measurement method for both rigid and flexible devices is the same but the experimental apparatus can be different due to the flexibility of the flexible thermoelectric device. In order to use the advantage of a flexible thermoelectric device as well as to investigate its limitations, the performance of the flexible thermoelectric device should be determined under the bending condition.IEC 62830-5 pdf download.